sot-23 plastic-encapsulate transistors STD123S transistor (npn) features z low saturation medium current application z extremely low collector saturation voltage z suitable for low voltage large current drivers z high dc current gain and large current capability z low on resistance : r on =0.6 ? (max.) (i b =1ma) marking:123 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 20 v v ceo collector-emitter voltage 15 v v ebo emitter-base voltage 6.5 v i c collector current -continuous 1 a p c collector power dissipation 350 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax unit collector-base breakdown voltage v (br) cbo i c =50 a, i e =0 20 v collector-emitter breakdown voltage v (br) ceo i c =1ma, i b =0 15 v emitter-base breakdown voltage v (br) ebo i e = 50 a, i c =0 6.5 v collector cut-off current i cbo v cb = 20 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 6v, i c =0 0.1 a dc current gain h fe v ce =1v, i c = 100ma 150 collector-emitter saturation voltage v ce (sat) i c =500ma, i b = 50ma 0.3 v transition frequency f t v ce =5v, i c =50ma 260 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 5 pf on resistance r on f=1khz,i b =1ma, v in =0.3v 0.6 ? sot-23 1. base 2. emitter 3. collector 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,sep,2013
0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 0.1 1 10 1 10 100 1 10 100 1000 10 100 1000 012345 0 100 200 300 400 0.1 1 10 100 1000 200 400 600 800 1000 1200 1 10 100 1000 1 10 100 1000 ambient temperature t a ( ) collector power dissipation p c (mw) p c ?? t a 20 STD123S c ob c ib f=1mhz i e =0 / i c =0 t a =25 v cb / v eb c ob / c ib ?? capacitance c (pf) reverse voltage v (v) i c h fe ?? dc current gain h fe collector current i c (ma) t a =25 t a =100 common emitter v ce =1v 640ua 800ua 720ua 560ua 480ua 400ua 320ua 240ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic 160ua i b =80ua common emitter t a =25 collector current i c (ma) base-emitter saturation voltage v besat (mv) t a =25 t a =100 =10 i c v besat ?? =10 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) t a =100 t a =25 v cesat ?? i c 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,sep,2013
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